Research topic

Semiconductor materials and devices

Discover papers and researchers connected with this scholarly topic.

Research papers

2009 · Journal of Physics Condensed Matter · 29,207 citations

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

QUANTUM ESPRESSO is an integrated suite of computer codes for electronic-structure calculations and materials modeling, based on density-functional theory, plane waves, and pseudopotentials (norm-conserving, ultrasoft, and projector-augmented wave). The acronym ESPRESSO stands for opEn Source Package for Research in Electronic Structure, Simulation, and Optimization. It is freely available to researchers around the world under the terms of the GNU General Public License. QUANTUM ESPRESSO builds upon newly-restructured electronic-structure codes that have been developed and tested by some of the original authors of novel electronic-structure algorithms and applied in the last twenty years by some of the leading materials modeling groups worldwide. Innovation and efficiency are still its main focus, with special attention paid to massively parallel architectures, and a great effort being devoted to user friendliness. QUANTUM ESPRESSO is evolving towards a distribution of independent and interoperable codes in the spirit of an open-source project, where researchers active in the field of electronic-structure calculations are encouraged to participate in the project by contributing their own codes or by implementing their own ideas into existing codes.

2016 · ECS Transactions · 5 citations

(Invited) Compliance-Free Pulse Forming of Filamentary RRAM

Despite the overwhelming effort to improve the efficacy of resistive random access memory (RRAM), the underlying physics governing RRAM operation have proven elusive. A survey of the recent literature almost universally indicates that the remaining glaring issues center around variability as well as endurance. The initial filamentary “forming” process is often linked to these problems. This work details our recent efforts to bring the forming process under control and the resulting improvements in RRAM viability in hafnia-based devices. We track the forming process via a “forming energy” metric that allows for filament optimization. By removal of all current compliance elements, and their associated parasitics, a targeted forming energy is achieved using ultrashort voltage pulses. By tailoring the forming energy, we show remarkable endurance window control.